MEM4X16E43VTW-5 4 MEG x 16 EDO DRAM

Description

4 MEG x 16 EDO DRAM EDO DRAM .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

📥 Download Datasheet

MEM4X16E43VTW-5 Datasheet Preview — Preview of MEM4X16E43VTW-5 PDF

Datasheet Specifications

Part number: MEM4X16E43VTW-5
Manufacturer: ETC
File Size: 598.34 KB
Datasheet: MEM4X16E43VTW-5_ETC.pdf
Description: 4 MEG x 16 EDO DRAM

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (4) 13 row, 9 column addresses (8)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-compatible

MEM4X16E43VTW-5 Distributors

📁 Related Datasheet

MEM1005PP MEM2012T101RT0S1 MEM2012T201RT0S1 MEM2012T25R0T0S1 MEM2012T35R0T0S1 MEM2012T50R0T0S1

📌 All Tags

MEM4X16E43VTW-5 MEG EDO DRAM ETC

ETC MEM4X16E43VTW-5-like datasheet