* VDS (V) =-20V
* ID =-10 A (VGS =-10V)
* RDS(ON) ＜ 14 mΩ (VGS =-4.5V)
* RDS(ON) ＜ 20mΩ (VGS =-2.5V)
* Diode Exhibits High Speed, Soft Recovery
* Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta =
NTMS10P02R2 Datasheet (1.68 MB)
NTMS10P02R2
ETC
1.68 MB
P-channel mosfet.
+0.040.21 -0.02
SOP-8
NTMS10P02R2 P-Channel MOSFET
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
D
G S
* Fea.
📁 Related Datasheet
NTMS10P02R2 - Power MOSFET
(On Semiconductor)
NTMS10P02R2 Power MOSFET −10 Amps, −20 Volts
P−Channel Enhancement−Mode Single SO−8 Package
Features
• • • • • • •
Ultra Low RDS(on) Higher Efficien.
NTMS3P03R2 - P-Channel Power MOSFET
(ON Semiconductor)
NTMS3P03R2
Power MOSFET -3.05 Amps, -30 Volts
P-Channel SOIC-8
Features
•ăHigh Efficiency Components in a Single SOIC-8 Package •ăHigh Density Power M.
NTMS4107N - Power MOSFET
(ON Semiconductor)
NTMS4107N Power MOSFET
30 V, 18 A, Single N−Channel, SO−8
Features
..
• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low.
NTMS4117N - Power MOSFET
(ON Semiconductor)
NTMS4117N Product Preview Power MOSFET
30 V, 16 A, Single N−Channel, SO−8
Features
..
• Low RDS(on) • Fast Switching Times • Pb−Fre.
NTMS4118N - Power MOSFET
(ON Semiconductor)
NTMS4118N Product Preview Power MOSFET
30 V, 14.8 A, Single N−Channel, SO−8
Features
..
• Low RDS(on) • Fast Switching Times • Pb−F.
NTMS4176P - Power MOSFET
(ON Semiconductor)
NTMS4176P Power MOSFET
-30 V, -9.6 A, P-Channel, SOIC-8
Features
..
•ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance t.
NTMS4177P - P-Channel Power MOSFET
(ON Semiconductor)
MOSFET – Power, P-Channel, SOIC-8
-30 V, -11.4 A
NTMS4177P
Features
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver .
NTMS4404N - N-Channel Power MOSFET
(ON Semiconductor)
NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
• Miniatu.
