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Q2N2222 Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
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1 2 3
CASE 29–11, STYLE 17 TO–92 (TO–226AA)
COLLECTOR 1 2 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
Q2N2222 Datasheet
