SDM9926A
S DM9926A
S am Hop Microelectronics C orp. November , 2002
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) TYP
6A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
26 @ V G S = 4.0V 35 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage.
D1
D1
D2
D2
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 8 6.0 35 1.7 2 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W
S DM9926A
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS...
