SKI-FF530
ETC
186.51kb
Infrared emitting diode which mounted high power 850 nm ir chip.
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📁 Related Datasheet
SKI03021 - N-channel Trench Power MOSFET
(Sanken)
30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03021
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03021 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
SKI03021
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
SKI03036 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI03036
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Re.
SKI03036 - N-channel Trench Power MOSFET
(Sanken)
30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03036
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03063 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI03063
FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Re.
SKI03063 - N-channel Trench Power MOSFET
(Sanken)
30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03063
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03087 - N-channel Trench Power MOSFET
(Sanken)
30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03087
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI04024 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI04024
FEATURES ·Drain Current –ID= 85A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-Re.
SKI04024 - N-channel Trench Power MOSFET
(Sanken)
40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI04024
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ------.
SKI04033 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI04033
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-Re.