SKI-FF530 Datasheet (186.51 KB)
SKI-FF530
ETC
186.51 KB
Infrared emitting diode which mounted high power 850 nm ir chip.
www.DataSheet4U.com
www.DataSheet4U.com
1.0
Ta = 25 Relative luminous intensity ( % )
0.8
0.6
0.4
0.2
0.0 730 770 810 850 890 930 970
Waveleng.
📁 Related Datasheet
SKI03021 - N-channel Trench Power MOSFET
(Sanken)
30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03021
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03021 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
SKI03021
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
SKI03036 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI03036
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Re.
SKI03036 - N-channel Trench Power MOSFET
(Sanken)
30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03036
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03063 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI03063
FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Re.
SKI03063 - N-channel Trench Power MOSFET
(Sanken)
30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03063
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI03087 - N-channel Trench Power MOSFET
(Sanken)
30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET
SKI03087
Features
V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ID ------.
SKI04024 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SKI04024
FEATURES ·Drain Current –ID= 85A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-Re.
