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SKI-FF530 Infrared emitting diode which mounted high power 850 nm IR CHIP

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www.DataSheet4U.com www.DataSheet4U.com 1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Waveleng.

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Part number
SKI-FF530
Manufacturer
ETC
File Size
186.51 KB
Datasheet
SKI-FF530_ETC.pdf
Description
Infrared emitting diode which mounted high power 850 nm IR CHIP

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