SMJ44400
ETC
351.66kb
1m x 4 dram dynamic random-access memory. The SMJ44400 is a series of 4,194,304-bit dynamic random-access memories (DRAMs), organized as 1,048,576 words of four bits each. Thi
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SMJ44400 - 1M x 4 DRAM
(Micross)
DRAM
SMJ44400
1M x 4 DRAM
DYNAMIC RANDOM-ACCESS
MEMORY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-90847 • MIL-STD-883
FEATURES
• Organized 1,048.
SMJ44C251B - 256K x 4 VRAM
(Micross)
VRAM
SMJ44C251B MT42C4256
256K X 4 VRAM
256K x 4 DRAM with 512K x 4 SAM
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-89497 • MIL-STD-883
FEATURES.
SMJ40 - Stepping Motor
(FDK)
SM-SME001-0504
..
Stepping Motor
Applications
Mobile equipment Digital cameras, Mobile equipments, PDA, etc. Office automation equi.
SMJ1500-7B - Quad-Diode Mixer
(WJ Communications)
SMJ 1500-7B
Quad-Diode Mixer
The Communications Edge TM
Preliminary Product Information
Product Features
• Input IP3 +13 dBm • RF Freq 5 - 1500 MHz .
SMJ27C010A - 1 MEG UVEPROM UV Erasable Programmable Read-Only Memory
(Austin Semiconductor)
UVEPROM
Austin Semiconductor, Inc. 1 MEG UVEPROM
UV Erasable Programmable Read-Only Memory
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-89614 • MIL.
SMJ27C040 - UVEPROM
(Austin Semiconductor)
UVEPROM
Austin Semiconductor, Inc. 4 MEG UVEPROM
UV Erasable Programmable Read-Only Memory
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-91752 • MIL.
SMJ27C256 - UVEPROM
(Austin Semiconductor)
Austin Semiconductor, Inc.
UVEPROM
SMJ27C256
256K UVEPROM
UV Erasable Programmable Read-Only Memory
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962.
SMJ27C512 - UVEPROM
(Austin Semiconductor)
Austin Semiconductor, Inc.
UVEPROM
SMJ27C512
512K UVEPROM
UV Erasable Programmable Read-Only Memory
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-.
SMJ27C512 - UVEPROM
(Micross)
UVEPROM
SMJ27C512
512K UVEPROM
UV Erasable Programmable Read-Only Memory
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-87648 • MIL-STD-883
FEATURES.
SMJ320C25 - Digital Signal Processor
(Texas Instruments)
D Military Temperature Range
– –55°C to 125°C
D 100-ns or 80-ns Instruction Cycle Times D 544 Words of Programmable On-Chip Data
RAM
D 4K Words of On-.