* Organized 1,048,576 x 4
* Single +5V ±10% power supply
* Enhanced Page-Mode operation for faster memory access P Higher data bandwidth than conventional page-mode parts P Random Single-Bit Access within a row with a column address
* CAS-Before-RAS (CBR) Refresh
SMJ44400 Datasheet (351.66 KB)
SMJ44400
ETC
351.66 KB
1m x 4 dram dynamic random-access memory.
DRAM Austin Semiconductor, Inc. 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-90847 MIL-S.
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