SMT850N
Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Chip Dimension (3) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens
High Performance Infrared TOP IR LED
SMT850N consists of an Al Ga As LED mounted on the lead frame as TOP LED package and is 20m W typical of output power. It emits a spectral band of radiation at 850nm. Outer dimension (Unit: mm)
TOP IR LED SMT850N Al Ga As 0.4mm- 0.4mm 850nm typ. Silver Plated PPA Resin Epoxy Resin
Electro-Optical Characteristics [Ta=25°C] Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 m W Ta=25°C Forward Current IF 100 m A Ta=25°C Pulse Forward Current IFP 1,000 m A Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature -30 ~ +80 °C TSTG Soldering Temperature TSOL 240 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be pleted within 3 seconds at 230°C...
