VTS2082
ETC
19.57kb
Vts process photodiodes. This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their exc
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VTS40100CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low.
VTS80 - VTS Process Photodiodes
(ETC)
VTS Process Photodiodes
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic.
VTS82 - VTS Process Photodiodes
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VTS Process Photodiodes
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic.
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(ETC)
VTS Process Photodiodes
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic.
VTSB125A3 - SURFACE MOUNT TVS Diodes
(VIC)
Features
n Bidirectional TVS n ESD protection >15 kV n Replacement for MLV (0402) n Low Clamping Voltage n Low Leakage Current
Applications
n Cellula.
VTSB50X3 - SURFACE MOUNT TVS Diodes
(VIC)
Features
n Bidirectional TVS 5 V n Low capacitance - 0.3 pF n ESD protection >15 kV n Replacement for MLV (0402) n Low Clamping Voltage
Applications
.
VTSB52A3 - SURFACE MOUNT TVS Diodes
(VIC)
Features
n Bidirectional TVS 5 V n ESD protection >15 kV n Replacement for MLV (0402) n Low capacitance - 1.0 pF n Low Leakage Current
Applications
n.
VTSB54A3 - SURFACE MOUNT TVS Diodes
(VIC)
Features
n Bidirectional TVS n ESD protection 30 kV n Replacement for MLV (0402) n Low Clamping Voltage n Low Leakage Current
Applications
n Cellular.
VTSB55AP3 - SURFACE MOUNT TVS Diodes
(VIC)
Features
n Bidirectional TVS 5 V n ESD protection >30 kV n Replacement for MLV (0402) n Low Clamping Voltage n Low Leakage Current
Applications
n Mot.
VTSR - Dual-In-Line Resistor Networks
(Vishay Siliconix)
..
VTSR, VSSR, VSOR
Vishay Thin Film
SURFACE MOUNT NETWORKS
Molded, 25 or 50 Mil Pitch, Dual-In-Line Resistor Networks
FEATURES
• .