F3S3
Edal Industries
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Silicon power rectifiers.
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F3SPB30K - Silicon Bridge Rectifiers
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Production specification
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Features
Glass passivated junction High surge current capability Saves s.
F3SPB30M - Silicon Bridge Rectifiers
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Production specification
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Features
Glass passivated junction High surge current capability Saves s.
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polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
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F3007S - N-Channel MOSFET
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F3007S-VB Datasheet
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PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuratio.
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