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MEF64M16G150I3ND

1024Mbit 3.3V - NAND Flash Memory Module

MEF64M16G150I3ND Features

* q 3.3V±10% Supply/ Programming q Access Time: 50ns (Page Read) q Fast Page Write Cycle Time (200uSec ) q Package type: 66-Pin Ceramic PGA 1.385” SQ 66-Pin Ceramic PGA 1.080” SQ q 60mA typical erase/program current q 60mA active read current q Embedded Program/Erase Algorithms q Industrial & Militar

MEF64M16G150I3ND General Description

The MEF64M16ND is a 1024Megabit 3.3V NAND flash memory MCM, assembled in multilayered cofired ceramic package, designed for low noise and better ground bounce. Flowcharts of programming, byte write, block erase and other specifications are identical to “K9K1G08U0A" specifications and should be used .

MEF64M16G150I3ND Datasheet (921.74 KB)

Preview of MEF64M16G150I3ND PDF

Datasheet Details

Part number:

MEF64M16G150I3ND

Manufacturer:

Elisra

File Size:

921.74 KB

Description:

1024mbit 3.3v - nand flash memory module.

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MEF64M16G150I3ND 1024Mbit 3.3V NAND Flash Memory Module Elisra

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