N2SV6H16FS-6K Datasheet (Elixir)

N2SV6H16FS-6K, SDRAM

The N2SV6H16FS is four-bank Synchronous DRAMs organized as 1Mbit x 16 I/O x 4 Bank, and N2SV12816FS organized as 2 Mbit x 16 I/O x 4 Bank.

These synchronous devices achieve high-speed data transfer rates of up to 166MHz by employing a pipeline chip architecture that synchronizes the output data to a

N2SV6H16FS-6K Features

* Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8, Full page Programmable Wrap: Sequential or Interleave Burst Read with Si