EBE10EE8ACWA Datasheet - Elpida Memory

EBE10EE8ACWA 1GB Unbuffered DDR2 SDRAM DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 CB0 to CB7 /RAS /CAS /WE /CS0 CKE0 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS8, /DQS0 to /DQS8 DM0 to DM8 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0 NC Function Address input Row address Column address Auto precharge Bank select address Data input/outp.

DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE10EE8ACWA (128M words × 72 bits, 1 Rank) Specifications Density: 1GB Organization  128M words × 72 bits, 1 rank Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) Power supply: VDD = 1.8V ± 0.1V Data rate: 800Mbps/667Mbps (max.)

EBE10EE8ACWA Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re

EBE10EE8ACWA_ElpidaMemory.pdf