EBE10UE8AEFA Datasheet - Elpida Memory

EBE10UE8AEFA 1GB Unbuffered DDR2 SDRAM DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 /RAS /CAS /WE /CS0 CKE0 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0 NC Function Address input Row address Column address Auto precharge Bank select address Data input/output Row addr.

DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE10UE8AEFA (128M words × 64 bits, 1 Rank) Specifications Density: 1GB Organization  128M words × 64 bits, 1 rank Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) (EBE10UE8AEFA-xx-E)  Lead-free (RoHS compliant) and Halogen-free (EBE10UE8AEFA-xx-F)

EBE10UE8AEFA Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re

EBE10UE8AEFA_ElpidaMemory.pdf