EBE11ED8AGWA Datasheet - Elpida Memory

EBE11ED8AGWA 1GB Unbuffered DDR2 SDRAM DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1 DQ0 to DQ63 CB0 to CB7 /RAS /CAS /WE /CS0, /CS1 CKE0, CKE1 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS8, /DQS0 to /DQS8 DM0 to DM8 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0, ODT1 NC Function Address input Row address Column address Auto precharge Bank select address Da.

PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AGWA (128M words × 72 bits, 2 Ranks) Specifications Density: 1GB Organization  128M words × 72 bits, 2 ranks Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) Power supply: VDD = 1.8V ± 0.1V Data rate: 667Mbps/533M.

EBE11ED8AGWA Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re

EBE11ED8AGWA Datasheet (250.39 KB)