EBE21UE8ACWB Datasheet - Elpida Memory

EBE21UE8ACWB 2GB Unbuffered DDR2 SDRAM DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 /RAS /CAS /WE /CS0, /CS1 CKE0, CKE1 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0, ODT1 NC Function Address input Row address Column address Auto precharge Bank select address Data inp.

DATA SHEET www.DataSheet4U.com 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACWB (256M words × 64 bits, 2 Ranks) Specifications Density: 2GB Organization  256M words × 64 bits, 2 ranks Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) Power supply: VDD = 1.8V ± 0.1V Data rate: 800Mbps/667Mbps (max.)

EBE21UE8ACWB Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re

EBE21UE8ACWB Datasheet (280.46 KB)