EBE51UD8AGWA Datasheet - Elpida Memory

EBE51UD8AGWA 512MB Unbuffered DDR2 SDRAM DIMM

Pin name A0 to A13 A10 (AP) BA0, BA1 DQ0 to DQ63 /RAS /CAS /WE /CS0 CKE0 CK0 to CK2 /CK0 to /CK2 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0 to SA2 VDD VDDSPD VREF VSS ODT0 NC Function Address input Row address Column address Auto precharge Bank select address Data input/output Row address s.

PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8AGWA (64M words × 64 bits, 1 Rank) Specifications Density: 512MB Organization  64M words × 64 bits, 1 rank Mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) Power supply: VDD = 1.8V ± 0.1V Data rate: 667Mbps/533Mb.

EBE51UD8AGWA Features

* Double-data-rate architecture; two data transfers per clock cycle

* The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

* Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the re

EBE51UD8AGWA_ElpidaMemory.pdf