EDE5116ABSE, EDE5108ABSE - 512M bits DDR2 SDRAM

Elpida Memory

Datasheet Details

Part number	EDE5116ABSE, EDE5108ABSE
Manufacturer	Elpida Memory
File Size	697.92 KB
Description	512M bits DDR2 SDRAM
Datasheet	EDE5108ABSE_ElpidaMemory.pdf
Note	This datasheet PDF includes multiple part numbers: EDE5116ABSE, EDE5108ABSE. Please refer to the document for exact specifications by model.

The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

Power supply: VDD, VDDQ = 1.8V ± 0.1V.
Double-data-rate architecture: two data transfers per clock cycle.
Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
Differential clock inputs (CK and /CK).
DLL aligns DQ and DQS transitions with CK transitions.
Commands entered on e.

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Published: Mar 13, 2006 |