Description
DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) .
The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.
Features
* Power supply: VDD, VDDQ = 1.8V ± 0.1V
* Double-data-rate architecture: two data transfers per clock cycle
* Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver
* DQS is edge aligned
