CS H L L L OE X L X H WE X H L H I/O0-7 High-Z Data Out Data In High-Z Mode Deselected/ Power down Read Write Selected, Output Disabled Power Stand by Active Active Active Note : X means don’t care.
(Must be low or high state) 3 EM641FT8 RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Supply vol
EM641FT8 Document Title 512K x8 bit Low Power Full CMOS Static RAM Low Power, 512Kx8 SRAM Revision History Revision No.
0.0 www.DataSheet4U.com0.1 History Initial Draft 0.1 Revision IDR Current from 1.5uA to 7uA tOE from 25nsec to 30nsec with 55ns part Draft Date Nov.
20, 2007 Dec.
5, 2007 Remark Preliminary 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Emerging M
EM641FT8 Features
* - Very high speed : 45ns - Process Technology : 0.15um Full CMOS - Organization : 512K x8 - Power Supply Voltage => EM641FT8V : 4.5V~5.5V - Low Data Retention Voltage :1.5V (MIN) - Three state output and TTL Compatible www.DataSheet4U.com - Packaged product designed for 45/55/70ns - KGD based on SOP
EM641FT8_EmergingMemoryLogicSolutions.pdf
Datasheet Details
EM641FT8
Emerging Memory & Logic Solutions
424.04 KB
512k x8 bit low power full cmos static ram.
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