F16-100HIP Datasheet | Elite Semiconductor Microelectronics Technology

.. EN25F16 EN25F16 16 Megabit Serial Flash Memory with 4Kbytes Uniform Sector Features - Single power supply operation - Full voltage range: 2.7-3.6 volt - 16 Mbit Serial Flash - 16 M-bit/2048 K-byte/8192 pages - 256 bytes per programmable page - High performance - 100MHz clock rate - Low power consumption - 5 m A typical active current - 1 μA typical power down current - Uniform Sector Architecture: 512 sectors of 4-Kbyte 32 blocks of 64-Kbyte Any sector or block can be erased individually - Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin - High performance program/erase speed Page program time: 1.5ms typical Sector erase time: 150ms typical Block erase time 800ms typical Chip erase time: 18 Seconds typical - Lockable 512 byte OTP security sector - Minimum 100K endurance cycle - Package Options 8 pins SOP 200mil body width 8 contact VDFN 8 pins PDIP 16 pin SOP 300mil body width All Pb-free packages are Ro HS pliant - Industrial temperature Range GENERAL DESCRIPTION The EN25F16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-patible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F16 is designed to allow either single Sector at a time or full chip erase operation. The EN25F16 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., .essi..tw Rev. C, Issue Date:...