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S1L50000 HIGH DENSITY GATE ARRAY

S1L50000 Description

www.DataSheet4U.com DATA SHEET ASIC S1L50000 S1L50000 SERIES HIGH DENSITY GATE ARRAY Π.
EPSON Electronics America, Inc.

S1L50000 Features

* Process Integration Operating Speed 0.35µm 2/3/4 layer metalization CMOS process A maximum of 815,468 gates (2 input NAND gate equivalent) Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ) (2-input pair NAND, F/O = 2, Typical wire load) Input buffer: 380 ps (5.0V T

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Datasheet Details

Part number
S1L50000
Manufacturer
Epson
File Size
121.68 KB
Datasheet
S1L50000_Epson.pdf
Description
HIGH DENSITY GATE ARRAY

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