Part number: PTF10137
Manufacturer: Ericsson
File Size: 175.49KB
Download: 📄 Datasheet
Description: 12 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization en.
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliabili.
Image gallery
TAGS
📁 Related Datasheet
PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel.
PTF10134 - 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA a.
PTF10135 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET int.
PTF10136 - 6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
Description
The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier appli.
PTF10138 - 60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10138 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applicatio.
PTF10139 - 60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 86.
PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
(Ericsson)
e
PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel enhancement-mo.
PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications .
PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applic.
PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
(Ericsson)
PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10112 is an internally matched common source N-channel enhancemen.
