1N5368B Features
* ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipat ‧For use in stabilizing and clipping circuits with high power rating Absolute Maximum Ratings Parameter DC Power Dissipation at TL = 75 °C (Note1) Maximum Forward Voltage at IF = 1 A. Junct
Datasheet Details
1N5368B, 1N5341B
Eris
146.46 KB
Zener diode.
This datasheet PDF includes multiple part numbers: 1N5368B, 1N5341B.
Please refer to the document for exact specifications by model.
1N5368B Distributor
📁 Related Datasheet
1N5368 5W SILICON PLANAR ZENER DIODES (JINAN JINGHENG)
1N5368 5.OWATT SURMETIC 40 SILICON ZENER DIODES (Motorola)
1N5368 5.OWATT SURMETIC 40 SILICON ZENER DIODES (Motorola)
1N5368A SILICON ZENER DIODE (EIC)
1N5368B Silicon Zener Diode (Motorola)
1N5368B ZENER DIODE (GME)
1N5368B 5.0W ZENER DIODE (WON-TOP)
1N5368B Zener Diode (NTE)
