Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
Features
- ‧Fast Switching ‧Green Device Available
SOP-8 Pin Configuration
D2D2 D1 D1
G1 S1G1S2G2
D1
D2
G2
S1
S2
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current - Continuous (TA=25oC)
IDM
Drain Current - Pulsed (NOTE 1)
PD
Power Dissipation (TA=25oC)
TJ
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Marking Code.
S8MBG036-Eris.pdf
