S8MBG036 60V N+P Dual Channel MOSFET

Eris

Description

S8MBG036 60V N+P Dual Channel MOSFETs General .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: S8MBG036
Manufacturer: Eris
File Size: 163.79 KB
Datasheet: S8MBG036-Eris.pdf
Description: 60V N+P Dual Channel MOSFET

Features

* ‧Fast Switching ‧Green Device Available SOP-8 Pin Configuration D2D2 D1 D1 G1 S1G1S2G2 D1 D2 G2 S1 S2 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TA=25oC) IDM Drain Current

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S8MBG036 60V N +P Dual Channel MOSFET Eris

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