S8MNC4P2
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
30V N-Channel MOSFETs
BVDSS 30 V
RDS(ON) 4.2 mΩ
ID 30 A
Features
‧RDS(ON)≦4.2mΩ@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available
SOP-8 Pin Configuration
D DD D
SS SG
Applications ‧MB / VGA / Vcore ‧POL Applications ‧SMPS 2nd SR
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC=25o C) Drain Current
- Continuous (TC=100o C)
Drain Current
- Pulsed (NOTE 1)
Single Pulse Avalanche Energy (NOTE 2)
Single Pulse Avalanched Current (NOTE...
