TNMNG100
Description
The TNMNG100 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The TNMNG100 meets the Ro HS and Green Product requirement with full function reliability approved.
60V N-Channel MOSFETs
BVDSS 60 V
RDS(ON) 100 mΩ
ID 2.3 A
Features
‧RDS(ON)≦100mΩ@VGS=10V ‧Green Device Available ‧Super Low Gate Charge ‧Excellent Cdv/dt Effect Decline ‧Advanced High Cell Density Trench Technology
SOT-23 Pin Configuration
Applications ‧Battery Protection ‧Load Switch ‧Uninterruptible Power Supply
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TA=25o C)
Drain Current
- Pulsed
Total Power Dissipation (NOTE 2) (TA=25o C)
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Marking Code
Thermal Characteristics
Symbol
Parameter
RθJ...
