TNMNG30H
Features
‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦3.2Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low
On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM
BVDSS RDS(ON)
60 V 3 Ω 320 m A
Mechanical Data
‧Case：SOT-23 ‧Marking：K72
Ordering Information
Part No.
Remark
Ro HS pliant
TNMNG30H-H
Halogen Free
TNMNG30H-Q
AEC-Q101 qualified
Package SOT-23
Packing 3000 / Tape & Reel
Maximum Ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Pulsed Drain Current (NOTE 1) Total Power Dissipation (NOTE 3) Junction and Storage Temperature Range Typical Thermal Resistance NOTE： 1.Maximum DC current limited by the package 2.Pulse test：pulse width≦ 300us, duty cycle≦ 2.0%. 3.1- MRP FR-4 PC board,2oz.
Symbol VDSS VGSS ID IDM PD
TJ , TSTG RθJA
Limit 60 ±20 320
2000 350 -55~150 357
Unit V V m A m A m W o C o C/W
Revision: B05
DC-01259 1/6
.eris..tw
60V N-Channel MOSFET
Electrical...
