TNMNG30H - 60V N-Channel MOSFET

Datasheet Details

‧RDS(ON) ≦3Ω@VGS=10V ‧RDS(ON) ≦3.2Ω@VGS=4.5V ‧High Density Cell Design For Ultra Low On-Resistance ‧Very Low Leakage Current In Off Condition ‧ESD Protected 2KV HBM BVDSS RDS(ON) ID 60 V 3 Ω 320 mA Mechanical Data ‧Case：SOT-23 ‧Marking：K72 Ordering Information Part No. Remark TNMNG30H RoHS Compliant TNMNG30H-H Halogen Free TNMNG30H-Q AEC-Q101 qualified Package SOT-23 Packing 3000 / Tape & Reel Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-So.

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Published: Aug 20, 2025 |