FLX257XV Datasheet, Hemt, Eudyna Devices

FLX257XV Features

• Hemt
• High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) DESCRIPT

PDF File Details

Part number:

FLX257XV

Manufacturer:

Eudyna Devices

File Size:

84.28kb

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📄 Datasheet

Description:

Gaas fet & hemt. The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides

FLX257XV Application

• Applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance Program assures

TAGS

FLX257XV

Eudyna Devices

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