6N135
Features
- High speed 1Mbit/s
- High isolation voltage between input and output (Viso=5000 Vrms )
- Guaranteed performance from 0°C to 70°C
- Wide operating temperature range of -55°C to 100°C
- Pb free and Ro HS pliant
- UL and c UL approved(No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved
- FIMKO approved
Pin Configuration 1. No Connection 2. Anode 3. Cathode 4. No Connection 5. Gnd 6. Vout 7. VB 8. VCC
Pin Configuration 1. No Connection 2. Anode 3. Cathode 4. No Connection 5. Gnd 6. Vout 7. No Connection 8. VCC
Description
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an...
Representative 6N135 image (package may vary by manufacturer)