EID1112A1-8 Datasheet - Excelics Semiconductor

EID1112A1-8 11.70-12.70 GHz 8-Watt Internally Matched Power FET

EID1112A1-8 Features

* 11.70-12.70 GHz Bandwidth

* Input/Output Impedance Matched to 50 Ohms

* +39.5 dBm Output Power at 1dB Compression

* 8.0 dB Power Gain at 1dB Compression

* 35% Power Added Efficiency

* Hermetic Metal Flange Package

* 100% Tested for DC, RF, an

Datasheet Details

EID1112A1-8

Excelics Semiconductor

109.11 KB

11.70-12.70 ghz 8-watt internally matched power fet.

EID1112A1-8 Distributor

📁 Related Datasheet

EID1112A1-5 11.70-12.70 GHz 5-Watt Internally Matched Power FET (Excelics Semiconductor)

EID1314A1-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET (Excelics Semiconductor)

EID1314A1-5 13.75-14.50 GHz 5-Watt Internally-Matched Power FET (Excelics Semiconductor)

EID1314A1-8 13.75-14.50 GHz 8-Watt Internally-Matched Power FET (Excelics Semiconductor)

EID1414A1-12 14.00-14.50 GHz 12-Watt Internally Matched Power FET (Excelics Semiconductor)

EID1414A1-5 14.00-14.50 GHz 5-Watt Internally-Matched Power FET (Excelics Semiconductor)

EID1414A1-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET (Excelics Semiconductor)

EID1415A1-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET (Excelics Semiconductor)

TAGS