DPGEW1S09H Low-Cost High-Power Laser-Diode

Excelitas

Description

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.
PGEW1SXXH Single chip laser. Single epi-cavity DPGEW1SXXH Single chip laser. Double epi-cavity TPGEW1SXXH Single chip laser.

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Datasheet Specifications

Part number: DPGEW1S09H
Manufacturer: Excelitas
File Size: 641.12 KB
Datasheet: DPGEW1S09H-Excelitas.pdf
Description: Low-Cost High-Power Laser-Diode

Features

* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
* Peak power over 100 W at 20 ns pulse width
* High reliability
* Small emitting areas increase fiber coupled output
* Lower cost plastic packaging for high volume

Applications

* Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers.

DPGEW1S09H Distributors

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DPGEW1S09H Low-Cost High-Power Laser-Diode Excelitas

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