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QPGEW1S09H

Low-Cost High-Power Laser-Diode

QPGEW1S09H Features

* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area

* Peak power over 100 W at 20 ns pulse width

* High reliability

* Small emitting areas increase fiber coupled output

* Lower cost plastic packaging for high volume

QPGEW1S09H General Description

PGEW1SXXH Single chip laser

* Single epi-cavity DPGEW1SXXH Single chip laser

* Double epi-cavity TPGEW1SXXH Single chip laser

* Triple epi-cavity QPGEW1SXXH Single chip laser

* Quad epi-cavity Total # of emitting stripes 1 Typical peak power at iFM, 100 ns, 10A.

QPGEW1S09H Datasheet (680.19 KB)

Preview of QPGEW1S09H PDF

Datasheet Details

Part number:

QPGEW1S09H

Manufacturer:

Excelitas

File Size:

680.19 KB

Description:

Low-cost high-power laser-diode.
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Se.

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QPGEW1S09H Low-Cost High-Power Laser-Diode Excelitas

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