QPGEW1S09H - Low-Cost High-Power Laser-Diode
PGEW1SXXH Single chip laser * Single epi-cavity DPGEW1SXXH Single chip laser * Double epi-cavity TPGEW1SXXH Single chip laser * Triple epi-cavity QPGEW1SXXH Single chip laser * Quad epi-cavity Total # of emitting stripes 1 Typical peak power at iFM, 100 ns, 10A
DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications.
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip.
This multi-layer design multiplies the output power by the number of epi-la
QPGEW1S09H Features
* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
* Peak power over 100 W at 20 ns pulse width
* High reliability
* Small emitting areas increase fiber coupled output
* Lower cost plastic packaging for high volume
