Description
PGEW1SXXH Single chip laser
Single epi-cavity
DPGEW1SXXH Single chip laser
Double epi-cavity
TPGEW1SXXH Single chip laser
Triple epi-cavity
QPGEW1SXXH Single chip laser
Quad epi-cavity
Total # of emitting stripes
1
Typical peak power
at iFM, 100 ns, 10A 3 mils (75 µm) stripe width
at iFM, 100 ns, 30A 9 mils (225 µm) stripe width
6.5 W
23 W
2 13 W
45 W
3 20 W
70 W
4 25 W
85 W
Table 2: Maximum Ratings
Parameter Peak reverse voltage Pulse dur
Features
- Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area.
- Peak power over 100 W at 20 ns pulse width.
- High reliability.
- Small emitting areas increase
fiber coupled output.
- Lower cost plastic packaging for
high volume.
- RoHS compliant.
QPGEW1S09H-Excelitas.pdf
