QPGEW1S09H Datasheet - Excelitas

QPGEW1S09H Low-Cost High-Power Laser-Diode

PGEW1SXXH Single chip laser * Single epi-cavity DPGEW1SXXH Single chip laser * Double epi-cavity TPGEW1SXXH Single chip laser * Triple epi-cavity QPGEW1SXXH Single chip laser * Quad epi-cavity Total # of emitting stripes 1 Typical peak power at iFM, 100 ns, 10A.

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications. Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-la.

QPGEW1S09H Features

* Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area

* Peak power over 100 W at 20 ns pulse width

* High reliability

* Small emitting areas increase fiber coupled output

* Lower cost plastic packaging for high volume

QPGEW1S09H Datasheet (680.19 KB)