A06N03N Datasheet - Excelliance MOS

A06N03N N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMA06N03AN LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Rep.

A06N03N Datasheet (227.87 KB)