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EMB06N06HS N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5m.

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Datasheet Specifications

Part number
EMB06N06HS
Manufacturer
Excelliance MOS
File Size
910.33 KB
Datasheet
EMB06N06HS-ExcellianceMOS.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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