EMB06N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB06N06HS
Manufacturer	Excelliance MOS
File Size	310.49 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB06N06HS Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5mΩ ID@TC=25°C 77A EMB06N06HS Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 77 ID TC = 100 °C 49 IDM 122 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31.2 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=30V, L=0.

Published: Jun 23, 2024 |