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EMB06N06HS Datasheet - Excelliance MOS

EMB06N06HS N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5mΩ ID@TC=25°C 77A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation .

EMB06N06HS Datasheet (910.33 KB)

EMB06N06HS Datasheet Preview — Preview of EMB06N06HS PDF

Datasheet Details

Part number:

EMB06N06HS

Manufacturer:

Excelliance MOS

File Size:

910.33 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB06N06HS N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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