EMC08N08E Datasheet - Excelliance MOS

EMC08N08E MOSFET

EMC08N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 75V D RDSON (MAX.) 8mΩ ID 118A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=85A, RG=25Ω L = 0.05mH Power Dissip.

EMC08N08E-ExcellianceMOS.pdf