EME07N02A Datasheet - Excelliance MOS

EME07N02A MOSFET

EME07N02A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 15V D RDSON (MAX.) 7mΩ ID 65A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=35A, RG=25Ω Power Dissipation TC = 25 °C TC = 100.

EME07N02A Datasheet (228.27 KB)