EMP85N10H - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Datasheet Details

Part number	EMP85N10H
Manufacturer	Excelliance MOS
File Size	395.61 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMP85N10H-ExcellianceMOS.pdf

EMP85N10H Product details

Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 7.5mΩ 10.0mΩ 107.0A ID @TA=25℃ 14.0A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current TA = 25 °C TA = 70 °C ID Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Ener

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Published: Nov 1, 2025 |