FLL100
FAAM
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FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
(Fujitsu)
.
FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
(Eudyna Devices)
FLL107ME
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47.
FLL120MK - L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability
• Hermeticall.
FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET
(Fujitsu)
.
FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity
(FAAM)
FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage .
FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL21E004ME - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E004ME
FEATURES
・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Fre.
FLL21E010MK - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E010MK
FEATURES
High Voltage - High Power GaAs FET
・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm(typ.) at f=2.17GHz ・High Gain: G1.
