FMBBAS19 - (FMBBAS19 - FMBBAS21) 200mW EPITAXIAL PLANAR DIODES
FMBBAS19 Features
* n PLANAR PROCESS n 200 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse VoltageVRM RMS Reverse VoltageVR(rms) Average Forward Rectified CurrentIO Non-Repetitive Peak Forward Surge CurrentIFSM Forward VoltageVF @ IF = 100 mA DC Reverse CurrentIR Power Dissipation
