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FKD6002 N-Channel MOSFET

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Description

FETek Technology Corp.* 100% EAS Guaranteed * Green Device Available * Super Low Gate Charge * Advanced high cell density Trench tech.
The FKD6002 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter a.

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Datasheet Specifications

Part number
FKD6002
Manufacturer
FETek
File Size
567.90 KB
Datasheet
FKD6002-FETek.pdf
Description
N-Channel MOSFET

Applications

* The FKD6002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous

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