FKP3115
FETek
461.59kb
P-channel mosfet. The FKP3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous
TAGS
📁 Related Datasheet
FKP3105 - P-Channel MOSFET
(FETek)
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell d.
FKP3002 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell d.
FKP3006 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell d.
FKP300A - N-Channel MOSFET
(Sanken)
N-Channel MOS FET
FKP300A
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed
June, 2007 ■Package---FM100 (TO.
FKP300A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=300V(Min) ·Static Drain-Source On-Resistance
: .
FKP3014 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell d.
FKP3016 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell d.
FKP3018 - N-Channel MOSFET
(FETek)
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell d.
FKP3018B - N-Channel MOSFET
(FETek)
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell d.
FKP330C - Power MOSFET
(SANKEN)
N-Channel MOS FET
FKP330C
July. 2007
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy guarantee
■Package---FM100 (TO-3P Full M.
