F23BDSM23-W1 Datasheet, device equivalent, FN-LINK

F23BDSM23-W1 Features

  • Device 5 2 GENERAL SPECIFICATION6 2.1 WIFI RF SPECIFICATION 6 2.2 POWER CONSUMPTION 7 3 MECHANICAL SPECIFICATION 7 3.1 OUTLINE DRAWING 7 3.2 RECOMMENDED FOOTPRINT 8 3.3 PIN DEFINITION 9 4 ENVI

PDF File Details

Part number:

F23BDSM23-W1

Manufacturer:

FN-LINK

File Size:

477.94kb

Download:

📄 Datasheet

Description:

Highly integrated and excellent performance wireless lan (wlan) sdio network interface device. GND RF OUTPUT GND NC 3.3 or 4.2V Optional NC NC WL_REG_ON WAKE UP SDIO_D2 SDIO_D3 SDIO_CMD SDIO_CLK SDIO_D0 SDIO_D1 GND NC 1.8~3.3V N

Datasheet Preview: F23BDSM23-W1 📥 Download PDF (477.94kb)
Page 2 of F23BDSM23-W1 Page 3 of F23BDSM23-W1

TAGS

F23BDSM23-W1
highly
integrated
and
excellent
performance
Wireless
LAN
WLAN
SDIO
network
interface
device
FN-LINK

📁 Related Datasheet

F23BDSM25-W1 - IEEE 802.11 b/g/n 2.4GHz 1T1R WiFi (FN-LINK)
FN-LINK TECHNOLOGY LIMITED 5th Floor, A Building, Haoye Logistics Park, Shugang Channel, Bao'an District, Shenzhen City, CHINA TEL: 86-0755-29558186 F.

F23BUUM13-W2 - IEEE 802.11 b/g/n 2.4GHz 1T1R WiFi (FN-LINK)
FN-LINK TECHNOLOGY LIMITED 5th Floor, A Building, Haoye Logistics Park, Shugang Channel, Bao'an District, Shenzhen City, CHINA TEL: 86-0755-29558186 F.

F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2041 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts