FNK2302A
FNK
1.20MB
Low gate charge and operation. The FNK 2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a
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FNK2302 - N-Channel Power MOSFET
(FNK)
DESCRIPTION
The FNK 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
FNK2300 - low gate charge and operation
(FNK)
FNK2300
DESCRIPTION
The FNK 2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as lo.
FNK2301 - P-Channel Power MOSFET
(FNK)
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FNK ÿ #ÿ$%& ÿ %' (ÿ$)*
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FNK2304 - N-Channel Power MOSFET
(FNK)
FNK2304
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK 2304 uses advanced trench technology to provide excellent RDS(ON) and low ga.
FNK2305 - P-Channel Power MOSFET
(FNK)
ÿÿ
yÿÿÿ
5
FNK ÿ #ÿ$%& ÿ %' (ÿ$)*
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,-./0112134ÿ
+ ÿÿFNKÿÿÿ2305ÿ56 6ÿ &5 &ÿ#( ÿ# %%78ÿ#%ÿ9(%5:& ÿ ; #ÿ<=*>)?@ÿ%.
FNK2310 - N-Channel Power MOSFET
(FNK)
FNK2310
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK2310 uses advanced trench technology to provide excellent RDS(ON), low gate c.
FNK2310A - N-Channel Power MOSFET
(FNK)
FNK2310A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK2310A uses advanced trench technology to provide excellent RDS(ON), low gate.
FNK2012E - N-Channel Power MOSFET
(FNK)
N-Channel Enhancement Mode Power MOSFET
Description
The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope.
FNK22001 - N-Channel Power MOSFET
(FNK)
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low .
FNK22001A - N-Channel Power MOSFET
(FNK)
FNK22001A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001A uses advanced trench technology and design to provide excellent RDS(O.