BRF8N65 - N-Channel MOSFET

FOSHAN BLUE ROCKET

Datasheet Details

Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS.

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Published: May 20, 2015 |