11P06 - FQB11P06

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Fairchild Semiconductor

Part number	11P06
Manufacturer	Fairchild Semiconductor
File Size	686.99 KB
Description	FQB11P06
Datasheet	11P06 Datasheet
Additional preview pages of the 11P06 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !.
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S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Volt.

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Published: Jun 29, 2010 |