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13N10 Datasheet - Fairchild Semiconductor

13N10_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

13N10

Manufacturer:

Fairchild Semiconductor

File Size:

690.71 KB

Description:

Fqb13n10.

13N10, FQB13N10

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse

13N10 Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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