7N60B Datasheet (Fairchild Semiconductor)

7N60B, 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

7N60B Features

* 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

* Low gate charge ( typical 38 nC)

* Low Crss ( typical 23 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* TO-220F package isolation = 4.0kV (Note 6) D G DS TO-220 SSP Serie