BS170 - N-channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	BS170
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.25 MB
Description	N-channel MOSFET
Datasheet	BS170_FairchildSemiconductor.pdf

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continuous - Pulsed 500 1200 60 60 ± 20 500 800 TJ, TSTG TL Operating and Storage Temp.

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Published: Mar 23, 2005 |