BS170 Datasheet - Fairchild Semiconductor

BS170 N-channel MOSFET

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applica.

BS170 Features

* High density cell design for low RDS(ON).

* Voltage controlled small signal switch.

* Rugged and reliable.

* High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170

BS170 Datasheet (1.25 MB)