BSV52 Datasheet - Fairchild Semiconductor

BSV52 NPN Transistor

BSV52 BSV52 C E SOT-23 Mark: B2 B NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 12 20 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Ran.

BSV52_FairchildSemiconductor.pdf