Part number:
F5E2
Manufacturer:
Fairchild Semiconductor
File Size:
150.54 KB
Description:
Algaas infrared emitting diode.
* Good optical to mechanical alignment
* Mechanically and wavelength matched 1.00 (25.4) MIN SCHEMATIC ANODE (Connected To Case) CATHODE 3 ANODE (CASE) to the TO-18 series phototransistor
* Hermetically sealed package 0.100 (2.54) 0.050 (1.27)
* High irradiance
F5E2
Fairchild Semiconductor
150.54 KB
Algaas infrared emitting diode.
📁 Related Datasheet
F5E1 - AIGAAS INFRARED EMITTING DIODE
(QT Optoelectronics)
.
F5E1 - AlGaAs INFRARED EMITTING DIODE
(Fairchild Semiconductor)
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
DESCRIPTION
The F5E series are 880nm LEDs in a wide angle, TO-46.
F5E2 - AIGAAS INFRARED EMITTING DIODE
(QT Optoelectronics)
.
F5E3 - AlGaAs INFRARED EMITTING DIODE
(Fairchild Semiconductor)
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
DESCRIPTION
The F5E series are 880nm LEDs in a wide angle, TO-46.
F5E3 - AIGAAS INFRARED EMITTING DIODE
(QT Optoelectronics)
.
F5-75R06KE3_B5 - IGBT
(Infineon)
Technische Information / Technical Information
IGBT-Module IGBT-modules
F5-75R06KE3_B5
EconoPACK™3 Modul mit Trench/Feldstopp IGBT3 und Emitter Con.
F5001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F5001H - INTELIGENT POWER SWITCH
(Fuji Electric)
.
