Datasheet4U Logo Datasheet4U.com

FCD380N60E - N-Channel MOSFET

Description

® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, pr

Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 97 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Datasheet preview – FCD380N60E

Datasheet Details

Part number FCD380N60E
Manufacturer Fairchild Semiconductor
File Size 233.02 KB
Description N-Channel MOSFET
Datasheet download datasheet FCD380N60E Datasheet
Additional preview pages of the FCD380N60E datasheet.

📁 Similar Datasheet

  • FCD360N65S3R0 - N-Channel MOSFET (ON Semiconductor)
  • FCD2250N80Z - N-Channel MOSFET (INCHANGE)
  • FCD260N65S3 - N-Channel MOSFET (ON Semiconductor)
  • FCD260N65S3 - N-Channel MOSFET (INCHANGE)
  • FCD4B14 - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
  • FCD4B14CC - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
  • FCD4B14CCB - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
  • FCD850 - Optically-Coupled Darlington Isolator (ETC)
  • FCD850N80Z - N-Channel MOSFET (INCHANGE)
  • FCD855 - Optically-Coupled Darlington Isolator (ETC)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) • 100% Avalanche Tested Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Published: |