FCD380N60E
Overview
® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
- 650 V @TJ = 150°C
- Max. RDS(on) = 380 mΩ
- Ultra Low Gate Charge (Typ. Qg = 34 nC)
- Low Effective Output Capacitance (Typ. = 97 pF)
- 100% Avalanche Tested
